View CR02AM-8_154888.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MITSUBISHI SEMICONDUCTOR THYRISTOR
CR02AM-8A
LOW POWER USE
GLASS PASSIVATION TYPE
CR02AM-8A
OUTLINE DRAWING
5.0 MAX 4.4
Dimensions in mm
2
VOLTAGE CLASS TYPE NAME
3 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL
CIRCUMSCRIBE CIRCLE 0.7
1.25 1.25
1.3
12.5 MIN
1
5.0 MAX
0.47 0.3 10 0.4 0.1 0.01 6 6 0.1 0.23
132
* IT (AV) ........................................................................ 0.3A * VDRM ....................................................................... 400V * IGT ......................................................................... 100A APPLICATION Strobe flasher
JEDEC : TO-92
MAXIMUM RATINGS
Symbol VRRM VRSM VR (DC) VDRM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state voltage
V1 V1
Voltage class 8 400 500 320 400 320
Symbol IT (RMS) IT (AV) ITSM I2t PGM PG (AV) VFGM VRGM IFGM Tj Tstg --
Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing
Conditions Commercial frequency, sine half wave, 180 conduction, Ta=30C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
Ratings
Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Weight Typical value
-40 ~ +125 -40 ~ +125
V1. With gate to cathode resistance RGK=1k.
Feb.1999
3.9 MAX
Unit V V V V V Unit A A A A2s W W V V A C C g
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR02AM-8A
LOW POWER USE
GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol IRRM IDRM VTM VGT VGD IGT IH Rth (j-a) Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Holding current Thermal resistance Test conditions Tj=125C, VRRM applied Tj=125C, VDRM applied, RGK=1k Tc=25C, ITM=0.6A, instantaneous value Tj=25C, VD=6V, IT=0.1A V3 Tj=125C, VD=1/2VDRM, RGK=1k Tj=25C, VD=6V, IT=0.1A V3 Tj=25C, VD=12V, RGK=1 Junction to ambient Limits Min. -- -- -- -- 0.2 1 -- -- Typ. -- -- -- -- -- -- -- -- Max. 0.1 0.1 1.6 0.8 -- 100 V2 3 180 Unit mA mA V V V A mA C/ W
V2. If special values of IGT are required, choose at least two items from those listed in the table below. (Example: AB, BC) Item IGT (A) A 1 ~ 30 B 20 ~ 50 C 40 ~ 100
The above values do not include the current flowing through the 1k resistance between the gate and cathode.
V3. IGT, VGT measurement circuit. A1 IGS 3V DC A3 RGK 1 1k SWITCH IGT A2 2 V1 VGT TUT 6V DC 60
SWITCH 1 : IGT measurement SWITCH 2 : VGT measurement (Inner resistance of voltage meter is about 1k)
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS 101 7 Ta = 25C 5 3 2 100 7 5 3 2 10-1 7 5 3 2 10-2 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 ON-STATE VOLTAGE (V) RATED SURGE ON-STATE CURRENT 10
SURGE ON-STATE CURRENT (A)
9 8 7 6 5 4 3 2 1 0 100 2 3 4 5 7 101 2 3 4 5 7 102
ON-STATE CURRENT (A)
CONDUCTION TIME (CYCLES AT 60Hz)
Feb.1999
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR02AM-8A
LOW POWER USE
GLASS PASSIVATION TYPE
GATE CHARACTERISTICS 102
7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2
GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE
100 (%)
GATE VOLTAGE (V)
GATE TRIGGER CURRENT (Tj = tC) GATE TRIGGER CURRENT (Tj = 25C)
101
VFGM = 6V PG(AV) = 0.01W VGT = 0.8V
PGM = 0.1W
103 7 5 3 2 102 7 5 3 2 101 7 5 3 2
TYPICAL EXAMPLE
100
IGT = 100A (Tj = 25C) VGD = 0.2V IFGM = 0.1A
10-1
10-2 10-2 2 3 5 710-12 3 5 7 100 2 3 5 7 101 2 3 5 7 102 GATE CURRENT (mA)
100 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C)
GATE CURRENT VS. JUNCTION TEMPERATURE
GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 1.0
100 (%)
200 180 160 140 120 100 80 60 40 20 #1 #2
GATE TRIGGER VOLTAGE (V)
TYPICAL EXAMPLE IGT (25C) # 1 32A # 2 9A
0.9
0.8 0.7 0.6 0.5
GATE CURRENT (Tj=tC) GATE CURRENT (Tj=25C)
0.4 0.3 0.2
See V3
,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,,
DISTRIBUTION TYPICAL EXAMPLE
0.1 0 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C)
0 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT)
TRANSIENT THERMAL IMPEDANCE (C/W)
180 160 140 120 100 80 60 40 20 0 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 TIME (s)
AVERAGE POWER DISSIPATION (W)
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 200
MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) 0.8 0.7 0.6 0.5 60 0.4 0.3 0.2 0.1 0 0 0.1 0.2 = 30 360 RESISTIVE, INDUCTIVE LOADS 0.3 0.4 90 120 180
AVERAGE ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR02AM-8A
LOW POWER USE
GLASS PASSIVATION TYPE
140 120 100 80 60 40 20 0 0 = 30 60 90 120 0.1 0.2
AVERAGE POWER DISSIPATION (W)
ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160
AMBIENT TEMPERATURE (C)
MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) 0.8 0.7 0.6 90 0.5 0.4 0.3 0.2 0.1 0 0 0.1 0.2 = 30 60 120 180
360 RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION
180 0.3 0.4
360 RESISTIVE LOADS 0.5 0.3 0.4
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
AVERAGE POWER DISSIPATION (W)
ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160
AMBIENT TEMPERATURE (C)
MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.1 0.2 60 = 30 360 RESISTIVE, INDUCTIVE LOADS 0.5 0.3 0.4 90 180 120 DC 270
140 120 100 80 60 40 20 0 0 = 30 0.1 60 0.2
360 RESISTIVE LOADS NATURAL CONVECTION
120 90 180 0.3 0.4
0.5
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
AMBIENT TEMPERATURE (C)
BREAKOVER VOLTAGE (Tj = tC) BREAKOVER VOLTAGE (Tj = 25C)
ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 160 RESISTIVE, INDUCTIVE 140 LOADS NATURAL 360 120 CONVECTION 100 80 60 40 20 0 0 0.1 = 30 60 90 120 180 270 DC 0.2 0.3 0.4 0.5
BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE
100 (%)
160 140 120 100 80 60 40 20 0 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) TYPICAL EXAMPLE RGK = 1k
AVERAGE ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR02AM-8A
LOW POWER USE
GLASS PASSIVATION TYPE
100 (%)
120 100
TYPICAL EXAMPLE Tj = 125C
100 (%) BREAKOVER VOLTAGE (dv/dt = vV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s )
BREAKOVER VOLTAGE VS. GATE TO CATHODE RESISTANCE
BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 120 100 80 60 40 TYPICAL EXAMPLE # 1 IGT (25C) = 10A 20 # 2 IGT (25C) = 66A Tj = 125C, RGK = 1k #2 #1
BREAKOVER VOLTAGE (RGK = rk) BREAKOVER VOLTAGE (RGK = 1k)
80 60 40 20 0 10-1 2 3 5 7100 2 3 5 7101 2 3 5 7 102 GATE TO CATHODE RESISTANCE (k)
0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 RATE OF RISE OF OFF-STATE VOLTAGE (V/s)
HOLDING CURRENT VS. JUNCTION TEMPERATURE 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2
HOLDING CURRENT VS. GATE TO CATHODE RESISTANCE
100 (%)
500
HOLDING CURRENT (mA)
HOLDING CURRENT (RGK = rk) HOLDING CURRENT (RGK = 1k)
Tj = 25C IH (25C) = 1mA IGT (25C) = 25A
400 #1 300
TYPICAL EXAMPLE IGT (25C) IH (1k) # 1 13A 1.6mA 1.8mA # 2 59A
,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,,
JUNCTION TEMPERATURE (C)
DISTRIBUTION
TYPICAL EXAMPLE
#2 200
100 Tj = 25C 0 10-1 2 3 5 7100 2 3 5 7 101 2 3 5 7 102 GATE TO CATHODE RESISTANCE (k)
10-1 -60 -40 -20 0 20 40 60 80 100120 140
100 (%)
REPETITIVE PEAK REVERSE VOLTAGE (Tj=tC) REPETITIVE PEAK REVERSE VOLTAGE (Tj=25C)
REPETITIVE PEAK REVERSE VOLTAGE VS. JUNCTION TEMPERATURE 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C)
100 (%)
GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 102 7 5 4 3 2 Tj = 25C 101 100 2 3 4 5 7 101 2 3 4 5 7 102 TYPICAL EXAMPLE IGT (25C) #1 10A #2 66A #2
#1
GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC)
GATE CURRENT PULSE WIDTH (s)
Feb.1999

▲Up To Search▲

Price & Availability of CR02AM-8

	To Download CR02AM-8 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .